Principles of Semiconductor Devices (2nd Edition)

Principles of Semiconductor Devices (2nd Edition)

Dimitrijev, Sima
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The dimensions of modern semiconductor devices are reduced to the point where classical semiconductor theory, including the concepts of continuous particle concentration and continuous current, becomes questionable. Further questions relate to two-dimensional transport in the most important field-effect devices and one-dimensional transport in nanowires and carbon nanotubes.
Kategori:
Engineering
Tahun:
2012
Penerbit:
Oxford University Press
Bahasa:
english
Halaman:
658
ISBN 10:
0195388038
ISBN 13:
9780195388039
File:
PDF, 19.75 MB
IPFS:
CID , CID Blake2b
english, 2012
Mengunduh (pdf, 19.75 MB)
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    current
    voltage
    electrons
    electron
    layer
    junction
    semiconductor
    mosfet
    gate
    diode
    silicon
    equation
    depletion
    diffusion
    holes
    doping
    resistance
    figure
    drain
    generation
    bias
    bjt
    carrier
    atoms
    oxide
    capacitance
    reverse
    carriers
    circuit
    vds
    density
    recombination
    surface
    parameters
    minority
    substrate
    temperature
    effective
    vgs
    spice
    wave
    determine
    fermi
    effect
    saturation
    threshold
    levels
    thermal
    equal
    μm
    mobility
    negative
    zero
    device
    emitter
    devices
    vbe
    drift
    rate
    dependence

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